摘要
基于法布里珀罗(F-P)腔理论建立了一种简单有效的硅绝缘体(SOI)光波导损耗测量方法。该方法采用端面耦合,通过测试波导反射功率谱并利用傅里叶频谱信息,完成波导损耗的测量。推导中指出了无法直接利用反射谱F-P峰峰谷值求解损耗的限制因素。应用该方法实现了对刻蚀深度为750nm和宽度为1200nm的SOI脊形波导损耗的测量,表明该测量方法能够对小尺寸、低损耗波导实现较高精度的损耗测量。
A loss measurement method on silicon-on-insulator （SOI） waveguide is proposed on the basis of Fabry-Perot （F-P） cavity theory.Through end coupling,the method utilizes the Fourier transform information of the reflection power spectrum to achieve the waveguide loss measurement.In the process of derivation,the main reason why the loss index can not be directly solved from the peak and valley values of the F-P peaks of reflection spectrum is presented.In the experiment,the loss measurement on a SOI ridge waveguide with an etching depth of 750 nm and a width of 1200 nm is achieved by using the method,which indicates that the method can be used for the loss measurement on small size low-loss waveguides with a relatively high accuracy.
出处
《激光与光电子学进展》
CSCD
北大核心
2011年第2期30-35,共6页
Laser & Optoelectronics Progress
关键词
集成光学
法布里珀罗腔技术
脊形波导
损耗测量
反射谱
integrated optics
Fabry-Perot cavity technique
ridge waveguide
loss measurement
reflection spectrum
