双栅调控的硅量子线中的库仑振荡效应

Coulomb oscillations effect in dual gate controlled silicon nanowire

基于单电子隧穿和库仑阻塞效应,研究了硅量子线中的单电子输运特性.利用绝缘体上硅薄膜材料作为衬底构建侧栅结构的硅量子线单电子晶体管,通过背栅和侧栅对量子线的电子输运特性进行调制.实验发现,在硅量子线中分别观察到背栅和侧栅调制的单电子效应和库仑振荡现象.从微分电导的二维灰度轮廓图,清楚地观察到了库仑阻塞区,说明由于栅压导致在硅量子线中形成了库仑岛.

The tunable single electron effect and Coulomb oscillations were observed in Si nanowire transistors. By measuring the channel current as function of applied back-gate and side-gate voltage,the tunable single electron effect and Coulomb oscillations are investigated. From the differential conductance characteristics,the Coulomb diamonds are clearly observed due to the gate voltage-induced quantum dots formation in the Si nanowire.