掺杂GaN间隔层对双波长发光二极管光谱调控作用的研究

Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer

采用软件理论分析的方法对p型及n型掺杂的GaN间隔层在InGaN/GaN多量子阱双波长发光二极管中对光谱调控作用进行模拟分析.分析结果表明,掺杂的GaN间隔层的引入,可以有效地控制各阱中的电子或空穴浓度,很好地解决了双波长发光二极管中两种阱发光强度不均的问题,并且通过控制阻挡层的厚度,可以调控两种阱中的载流子浓度,从而调控发光峰的相对强度.这些可以归因于掺杂GaN间隔层对电子或空穴的阻挡作用.

A two-dimensional simulation of electrical and optical characteristics of dual-wavelength LED （light-emitting diode） with doped GaN interval layer is conducted with software. It shows that by the use of doped GaN interval layer,we can solve the luminescence intensity disparity of the two kinds of quantum wells in dual-wavelength LED. And through control of the thickness of the interval layer,we can adjust the relative luminescence intensity of the two kinds of quantum wells. Therefore,the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of holes or electrons by doped GaN interval layer.