铈掺杂对BaFBr:Eu^(2+)光激励发光性能的影响

Influence of Doped Cerium on Photostimulated Luminescence Properties of BaFBr:Eu^(2+)

采用一步反应法制备了BaFBr:Eu2+,Ce3+X射线影像存储材料。通过荧光光谱和光激励发光谱研究了材料的光致发光及其经X射线辐照后的光激励发光性质。结果发现,Ce离子的掺入使得BaFBr:Eu2+的发光性能明显增强,存在Ce3+离子向Eu2+离子的能量传递,Ce离子的掺杂浓度为0.7%(摩尔分数)左右时可得到较高的光致发光及光激励发光强度。且掺入Ce3+后,可以有效的形成能稳定存储的较低能级的电子陷阱,使得在信息读出过程中所需激励光能量降低,从而使得读出光的能量与价廉、便携的长波激光器的读出波长匹配得更好。

The X-ray storage phosphor BaFBr：Eu2＋,Ce3＋ was synthesized in a one-step procedure.The photo-luminescence（PL） and photostimualted luminescence（PSL） after X-ray irradiation of BaFBr：Eu2＋,Ce3＋ were studied,according to its PL and PSL spectra.The introduction of Ce ion into BaFBr：Eu2＋ made PL and PSL intensity of BaFBr：Eu2＋,Ce3＋ efficiently enhance,and the optimal concentration of Ce ion was about 0.7%.Besides,with the introduction of Ce,the corresponding electron traps with shallow energy level were formed.This made it possible to used inexpensive and convenient semiconductor light-emitting diodes（LED） instead of gas lasers for photostimulation.