期刊文献+

银基透明导电多层膜界面研究进展 被引量:1

Ag-based transparent conducting multilayer thin films:the role of interfaces
下载PDF
导出
摘要 由于具有较低的电阻率和成本、较好的机械加工性能、设计上的灵活性,可室温沉积等优点,银基透明导电多层膜已广泛应用于低辐射膜、强电磁屏蔽、低功耗光电子器件特别是柔性电子器件等领域。但由于材料自身的性质与制备条件的差异性,实际制备的金属/电介质(或半导体)透明导电多层膜界面处往往存在表面等离子体共振、界面导电电子散射、膜层脱层开裂等问题,这些均与多层膜界面特性密切相关。本文针对这类问题,评述了近年来银基透明导电多层膜界面研究的进展,并对今后发展给予分析和展望。 Ag-based transparent conducting multilayer thin films have been widely applied to low-E windows, high-performance electromagnetic shielding, low power-consuming optoelectronic devices due to comparatively low sheet resistance, low deposition temperature, cost-effective raw materials and good mechanical process abil- ity. Several disadvantages, such as strongly surface plasmon resonance at the interface between the metal and dielectric layers, strongly scattering for conducting electrons from rough interfaces, delaminating cracking in the multilayer have been found in the fabricating and serving processes. In this paper, several problems involved and recent progress recently would be reviewed from different points of view. Finally, prospects in this field were suggested for the future.
作者 张晓锋 颜悦
出处 《功能材料》 EI CAS CSCD 北大核心 2011年第B02期6-10,共5页 Journal of Functional Materials
基金 国家高技术研究发展计划(863计划)资助项目(2008AA03A326)
关键词 银基透明导电薄膜 多层膜 界面研究 表面等离子体共振(SPR) Ag-based transparent conducting thin film multilayer interface surface plasmon resonance (SPR)
  • 相关文献

参考文献5

二级参考文献63

  • 1[1]Lewis Brian G. Paine David C, Applications and Processing of Transparent Conducting Oxides [M]. MRS Bulletin,August 2000.
  • 2[2]Granqvist C G, Hultaker A, Transparent and conducting ITO films: new developments and applications [J]. Thin Solid Films, 2002:411 1-5.
  • 3[3]Phillips Julia M, Cava R J, Thomas G A, et al. Zincindium-oxide: A high conductivity transparent conducting oxide. [J]. Appl. Phys. Lett, 1995, 67(15).
  • 4[4]Cava FL J, Phillips Julia M, Kwo J, G. et al. GaInO3: A new transparent conducting oxide. [J]. Appl Phys Lett, 1994, 64(16).
  • 5[5]Meng Yang, Yang Xi-liang, Chen Hua-xian, et al. A new transparent conductive thin film In 2O3 :Mo.[J].Thin Solid Films, 2001,394:219-223.
  • 6[6]Minami T, Kakumu T, Shimokawa K, et al. New transparent conducting ZnO-In2O3-SnO2 thin films prepared by magnetron sputtering. [J]. Thin Solid Films, 1998, 317: 318-321.
  • 7[7]Toshihiro Miyata, Shingo Suzuki, Makoto Ishii, et al. New transparent conducting thin films using multicomponent oxides composed of ZnO and V2O5 prepared by magnetron sputtering. [J]. Thin Solid Films, 2002, 411: 76-81.
  • 8[8]Hosono, Ohta H, Orita M, et al. Frontier of transparent conductive oxide thin films. [J]. Vacuum, 2002, 66:419-425.
  • 9[9]Hiroshi Kawazoe, Hiroshi Yanagi, Kazushige Ueda, et al.Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions. [J]. MRS Bulletin,August, 2000.
  • 10[10]Freeman A J, Poeppelmeier K R, Mason T O, R. et al.Chemical and Thin-Film Strategies for New Transparent Conducting Oxides. [J]. MRS Bulletin, August 2000.

共引文献61

同被引文献2

引证文献1

二级引证文献4

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部