摘要
以对比的手法介绍了两套结构相同的低本底反康普顿高纯锗γ谱仪在技术指标、性能上的差别;并通过详实的实验数据,对谱仪处在不同工作状态时的康普顿散射抑制效果作了细致的比较,分析了影响提高峰康比的主要因素。
This paper compares the technical index and features of two sets of low background anti Compton HPGe gamma ray spectrometer with same composition, and the restrain effect of Compton scattering at different work state by detailed and accurate data. The author also analyzes the main affecting factors for improving the peak to Compton ratio.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
1999年第5期385-389,共5页
Nuclear Electronics & Detection Technology
关键词
低本底
反康普顿
高纯锗
Γ谱仪
技术指标
Low background Anti Compton HPGe Detector Gamma ray Spectrometer