摘要
选用CuPc(酞菁酮)为供电子的材料,使用Bphen(4,7-二苯基-1,10-邻二氮杂菲)为缓冲层的材料,研究了结构为ITO/PEDOT:PSS/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm)的有机太阳能电池(OSC)。考察OSC性能与缓冲层Bphen厚度之间的关系,优化器件的结构。在标准太阳光照条件下(AM1.5)测量器件的I-V特性,结果显示,太阳电池的能量转换效率与缓冲层厚度密切相关。采用高真空蒸发的方法,制作了结构为ITO/PEDOT:PSS/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm)的器件,器件效率随着Bphen厚度的增加先增大后变小,当厚度为0 nm时,效率为0.85%;当厚度为2.5 nm时,效率为1.22%;而当厚度为5 nm时,效率为1.69%;当厚度为7.5 nm时,效率则为0.79%,当厚度为10 nm时,效率则为0%。
CuPc(Phthalocyanine ketone) and Bphen(8-hydroxyquinoline aluminum) were separately selected as donor materials and buffer layers to study the structure of ITO/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm) of the organic solar cells(OSC).The relationship between OSC barrier properties and the thickness of Bphen was analyzed to optimize the device structure.The current-voltage characteristic of the solar cell under AM1.5 solar illumination showed that the power conversion efficiency(PCE) was dependent of the different thickness of the buffer layer.ITO/CuPc(20 nm)/C60(40 nm)/Bphen(x)/Ag(100 nm) devices were made by high-vacuum evaporation technology.Efficiency first becomes higher and then lower as the thickness of the Bphen increased.When the thickness is 0 nm,the efficiency is 0.85%;when the thickness is 2.5 nm, the efficiency is 1.22%;when the thickness is 5 nm,the efficiency is 1.69%;when the thickness is 7.5 nm,the efficiency is 0.79%;10 nm,the efficiency is 0%.
出处
《光电子技术》
CAS
北大核心
2010年第4期250-254,共5页
Optoelectronic Technology
基金
教育部留学归国基金部级基金(GGRYJJ08-05)
教育部博士点基金部级基金(20090185110020)
四川省青年基金资助课题(09ZQ026-074)(9140A02060609DZ0208)