摘要
采用溶胶-凝胶法(Sol-Gel)在n型GaN衬底上制备了PZT铁电薄膜及其相应的金属-铁电体-半导体(MFS)结构,测量了该MFS结构的C-V特性,从理论上分析了所制备的MFS结构的阈值特性。阈值电压的实验与理论分析结果吻合较好。采用PZT铁电薄膜作为GaN基MFS结构的栅介质,利用其高介电常数和较强的极化电场可以显著降低GaN基MFS器件的工作电压。
MFS structure was obtained with the PZT ferroelectric thin films prepared directly by the Sol-Gel method on n-GaN substrates.The C-V characteristics of MFS structure were measured and the threshold characteristics of MFS structure were analyzed in theory.The results of experimentally are well with that of theoretical analysis.Adopting PZT ferroelectric thin films as the gate insulator of MFS structure on GaN substrates,and utilizing high dielectric constant and high polarization field provided by PZT films,the applied voltage when semiconductor layer approaches inversion is remarkably reduced.
出处
《电子器件》
CAS
2010年第6期684-686,共3页
Chinese Journal of Electron Devices
基金
国家部委资助项目(51308040203,6139801)
中央高校基本科研业务费资助(72105499,72104089)
陕西省自然科学基础研究计划资助项目(2010JQ8008)
