摘要
采用高温气相法生长四针状纳米ZnO.从扫描电子显微镜(SEM)照片可以得出在氧气流量为2SCCM,950℃下生长的ZnO具有较好的表面形貌,且四个针脚较均匀.场发射测试表明,在最佳工艺下生长的四针状纳米ZnO的开启场强为2.45 V/μm,阈值场强为3.4 V/μm,在阳极电压为1 850 V时,发光亮度达到1 520 cd/m2.实验证明四针状纳米ZnO是一种优良的场致发射的阴极材料,有望在场致发射器件中广泛应用.
The tetrapod-like ZnO was successfully synthesized by thermal evaporation.The effect of temperature,reaction time and oxygen flux on ZnO morphology was studied through an orthogonal experiment.SEM figures demostrates that the tetrapod-like ZnO synthesized at 950 ℃ and oxygen flux of 2 SCCM is well formed.Field emission measurement indicates that its turn-on field is about 2.45 V/μm and the threshold field is 3.4 V/μm.When the applied anode voltage is 1 850 V,the corresponding luminance is 1 520 cd/m2.The results show that ZnO is a potential material for field emission display.
出处
《厦门理工学院学报》
2010年第4期16-19,共4页
Journal of Xiamen University of Technology
