摘要
以IGBT模块的内部结构和材料特性为基础,研究了焊料层疲劳、铝键接线断裂或剥离、DCB基片失效等封装级故障产生机理;分析栅氧化层击穿、电过应力、辐射失效等器件级故障的产生机理;最后,分别给出了两大类故障的预报方法。
Based on the interior structures and materials characteristics of IGBT modules,packaging level failure mechanisms,such as solder fatigue, Al bonding wire crack or lift off and deterioration of DCB （ direct copper bonded） substrate, are researched. Chip level failure mechanisms, sueh as gate oxide breakdown, electrical overstress and radiation induced failure are analyzed. Finally, prediction methods of various failures are provided in IGBT modules.
出处
《世界科技研究与发展》
CSCD
2010年第6期741-745,793,共6页
World Sci-Tech R&D
基金
国家自然科学基金项目(50977063)
国家863项目(2008AA11A145)
天津市科技支撑计划重点项目(09ZCKFGX01800)
关键词
绝缘栅极双极晶体管
故障机理
预报方法
封装级
器件级
insulated gate bipolar transistors
failure mechanisms
prediction method
packaging level
chip level
