摘要
The effect of multihole silicon dioxide on the melting and crystallization behavior of poly(ethylene oxide) was investigated by means of DSC. It has been found that the melting temperature and enthalpy of poly(ethylene oxide) seem not to be affected by multehole silicon oxide, whereas the temperature of crystallization from melt is increased somewhat and the isothermal crystallization is accelected obviously. The Avrami exponents of poly(ethylene oxide)/silicon dioxide composite approach to that of pure poly(ethylene oxide). This suggests that the crystallization mechanism of poly(ethylene oxide) does not change after blending.
The effect of multihole silicon dioxide on the melting and crystallization behavior of poly(ethylene oxide) was investigated by means of DSC. It has been found that the melting temperature and enthalpy of poly(ethylene oxide) seem not to be affected by multehole silicon oxide, whereas the temperature of crystallization from melt is increased somewhat and the isothermal crystallization is accelected obviously. The Avrami exponents of poly(ethylene oxide)/silicon dioxide composite approach to that of pure poly(ethylene oxide). This suggests that the crystallization mechanism of poly(ethylene oxide) does not change after blending.
出处
《高等学校化学学报》
SCIE
EI
CAS
CSCD
北大核心
1999年第11期1823-1825,共3页
Chemical Journal of Chinese Universities
关键词
多孔二氧化硅
聚环氧乙烷
结晶
成核剂
晶体
Multihole silicon dioxide, Poly(ethylene oxide), Crystallization behavior
