叠氮化铅半导体桥点火研究

Study on the Ignition Character of Lead Azide by Semiconductor Bridge

利用半导体桥(Semiconductor Bridge,SCB)作为发火元件点燃叠氮化铅(Lead Azide,LA),获得了其电压电流曲线,通过分析其电压电流曲线和烧蚀后的桥面,发现两种不同的点火机理:当LA的颗粒较大时(45μm),利用SCB产生的等离子体将药剂点燃;当LA的颗粒较小时(1μm),SCB不产生等离子体就可以将药剂点燃。非等离子体点火时,其发火电压约为等离子体点火时的20%,降低了SCB的点火能量。此外,压药压力对非等离子体点火的最低发火电压有一定影响,80MPa时其发火电压最低。

Semiconductor bridge（SCB） was used to ignite lead azide （LA） and the curves of voltage time and current time were got. After analyzing the two kinds of curve, it was found that when the particle size of LA was large （45μm）, it could be ignited only by the plasma generated by SCB, and when the particle size was small （1μm）, it could be ignited by the heat released by SCB, but not plasma. The minimum firing voltage of the second ignition way was much lower than plasma ignition way. Also the pressure was an important factor which influence the minimum firing voltage, when the pressure was 80MPa, the firing voltage was the lowest.