期刊文献+

Development of EIPIG Ion Source

Development of EIPIG Ion Source
下载PDF
导出
摘要 A new EIPIG (Electron Injected-Penning Ionization Gauge) ion source is now under developing in IMP. This source aims to produce high intensity metallic ions of 2-3 charge state. To satisfy this requirement, we introduced some innovations based on typical hot cathode penning source in the design of EIPIG, such as injecting electron into the plasma, which increases the density of electrons in the plasma and enhances A new EIPIG (Electron Injected-Penning Ionization Gauge) ion source is now under developing in IMP. This source aims to produce high intensity metallic ions of 2-3 charge state. To satisfy this requirement, we introduced some innovations based on typical hot cathode penning source in the design of EIPIG, such as injecting electron into the plasma, which increases the density of electrons in the plasma and enhances PIG effect, improvement on cooling cathode and appliance of LaBs hollow cathode, which prolong the life of the cathode and the anti-cathode, the electric and magnetic confinement is adopted to confine the plasma,
出处 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2004年第1期173-173,共1页 IMP & HIRFL Annual Report
  • 相关文献

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部