Application of Heavy Ion Physics and Nuclear Technique——FTIR Investigation of C-implanted Crystalline SiO2 after 950 MeV Pb-ion irradiation

<正>Crystalline SiO2(c-SiO2) samples were firstly implanted at room temperature (RT) with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were performed on the 200 kV heavy ion implanter of IMP and the selected implantation doses are 2. 0×1017 , 5. 0×1017, 8. 6×1017 and 1. 2×1017C/cm2. The Pb ion irradiation was carried out at the IRASME (CIRIL-GANIL, Caen) and the irradiation fluencies are 5.0×1011,1. 0×1012 and 1..0×1012 Pb/cm2 , respectively. The chemical bonds formation in the samples was investigated by using a Spectrum GX IR spectroscopy.

Crystalline SiO2（c-SiO2） samples were firstly implanted at room temperature （RT） with 120 keV Cions and then irradiated at RT with 950 MeV Pb ions. The C-ion irradiation experiments were per rformed on the 200 kV heavy ion implanter of IMPand the seleetecl .implantatilon doses are2.0 ×10^17,