摘要
Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap (3. 37 eV) and a large binding energy (60 meV) that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO (ZnO:In) films have been investigated by many researchers. It has lower electrical conductivity and bet-
Wide band-gap semi-conducting compounds are very attractive in recent years because of the intense commercial interest in developing practical short wavelength semiconductor diode lasers for the huge market needs. ZnO has a wide band gap （3. 37 eV） and a large binding energy （60 meV） that allows efficient UV emission from excitation and makes it suitable for UV laser-emitting devices. Indium-doped ZnO （ZnO：In） films have been investigated by many researchers.
