摘要
Sputtering of solid surface atoms by slow highly charged ions (HCI) is an interesting research area in both fundamental and applied researches in the field of material analysis and modification. The total sputtering ion yield from some solid surfaces by HCI is measured at the Electron Cyclotron Resonance (ECR) ion source of the Heavy Ion Research Facility in Lanzhou (HIRFL). In this paper, the sputtering processes of the Pb36+ ions bombarding on the surfaces of Si and SiO2 are investigated.
Sputtering of solid surface atoms by slow highly charged ions （HCI） is an interesting research area in both fundamental and applied researches in the field of material analysis and modification. The total sputtering ion yield from some solid surfaces by HCI is measured at the Electron Cyclotron Resonance （ECR） ion source of the Heavy Ion Research Facility in Lanzhou （HIRFL）. In this paper, the sputtering processes of the Pb36＋ ions bombarding on the surfaces of Si and SiO2 are investigated.
