Surface Swelling of GaN Irradiated by Highly Charged Ar^q＋ Ions
Surface Swelling of GaN Irradiated by Highly Charged Ar^q＋ Ions
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1EEPW网站精彩内容摘录[J].电子产品世界,2011,18(9).
-
2Zhao Yongtao, Wang Yuyu, Fang Yan, Wang Tieshan and Xiao Guoqing.Electron Emission with Highly Charged Argon Ions Impinging on a Silicon Surface[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2004(1):44-44.
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3袁平,刘占稳,张汶,赵红卫,张雪珍,郭晓虹,李锡霞,周嗣信,王义芳,魏宝文.金属筒在ECR2高电荷态离子源中的应用[J].原子能科学技术,1999,33(5):392-396. 被引量：2
-
4王彬.充电时莫接打手机[J].农机具之友,2006(2):62-62.
-
5卢小红,孙久勋,郭阳,张达.Potential-Dependent Generalized Einstein Relation in Disordered Organic Semiconductors[J].Chinese Physics Letters,2009,26(8):297-300.
-
6冯北宁.为恒功率负载供电的恒功率整流器——亚斯康恒功率技术[J].邮电商情,2002,9(17):58-59.
-
7太阳能充电手机屏幕[J].机械工程师,2013(11).
-
8Cai Xiaohong Yu Deyang Lu Rongchun Shao Caojie Lu Jun Ruan Fangfang Zhang Hongqiang Cui Ying Xu Xu Shao Jianxiong Ding Baowei Yang Zhihu Chen Ximeng.X-ray Emission from Zr, Mo, In and Pb Targets Bombarded by Slow Highly Charged Ar^(q+) (q=13, 14, 15, 16) Ions[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2004(1):110-111.
-
9彭海波,王铁山,韩运成,丁大杰,徐鹤,程锐,赵永涛,王瑜玉.高电荷态离子与Si(110)晶面碰撞的沟道效应研究[J].物理学报,2008,57(4):2161-2164.
-
10Yang Yitao Zhang Chonghong Sun Youmei Yao Cunfeng Zhao Zhiming.Damage Accumulation in GaN Single Crystals Induced by Slow Highly-charged Heavy Ions[J].近代物理研究所和兰州重离子加速器实验室年报：英文版,2006(1):65-66.
