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Interfacial microstructure and properties of diamond/Cu-xCr composites for electronic packaging applications 被引量:12

Interfacial microstructure and properties of diamond/Cu-xCr composites for electronic packaging applications
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摘要 Diamond/Cu-xCr composites were fabricated by pressure infiltration process.The thermal conductivities of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were above 650 W/mK,higher than that of diamond/Cu composites.The tensile strengths ranged from 186 to 225 MPa,and the bonding strengths ranged from 400 to 525 MPa.Influences of Cr element on the thermo-physical properties and interface structures were analyzed.The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys.When the Cr concentration was up to 0.5 wt.%,the content of the Cr3C2 layer was constant.As the thickness of the Cr3C2 layer became larger,the composites showed a lower thermal conductivity but higher mechanical properties.The coefficients of thermal expansion(CTE) of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were in good agreement with the predictions of the Kerner' model. Diamond/Cu-xCr composites were fabricated by pressure infiltration process.The thermal conductivities of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were above 650 W/mK,higher than that of diamond/Cu composites.The tensile strengths ranged from 186 to 225 MPa,and the bonding strengths ranged from 400 to 525 MPa.Influences of Cr element on the thermo-physical properties and interface structures were analyzed.The intermediate layer was confirmed as Cr3C2 and the amount of Cr3C2 increased with the increase of Cr concentration in Cu-xCr alloys.When the Cr concentration was up to 0.5 wt.%,the content of the Cr3C2 layer was constant.As the thickness of the Cr3C2 layer became larger,the composites showed a lower thermal conductivity but higher mechanical properties.The coefficients of thermal expansion(CTE) of diamond/Cu-xCr(x = 0.1,0.5,0.8) composites were in good agreement with the predictions of the Kerner' model.
出处 《Rare Metals》 SCIE EI CAS CSCD 2011年第1期94-98,共5页 稀有金属(英文版)
基金 supported by the High-Tech Research and Development Program of China (Nos.2006AA03A135 and 2008AA03Z505)
关键词 composite materials copper interfaces bonding electronic packaging INFILTRATION composite materials copper interfaces bonding electronic packaging infiltration
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