期刊文献+

电子束蒸发沉积碲锗铅薄膜的微结构和化学组分研究

Microstructure and stoichiometry of lead-germanium-telluride films desposited using electron beam evaporation on silicon substrates
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摘要 为了探寻碲锗铅(Pb_(1-x)Ge_xTe)薄膜的最佳沉积方式,在硅基片上采用电子束蒸发沉积碲锗铅(Pb_(0.78)Ge_(0.22)Te)薄膜。使用X射线衍射(XRD)、电子扫描显微镜(SEM)、能量散射X射线分析(EDAX)等手段对薄膜的微结构和化学配比特性进行了分析。发现碲锗铅薄膜为多晶结构,具有明显的择优取向,晶粒多为矩形,薄膜中未出现其它相关氧化物。与热蒸发膜层相比,电子束蒸发沉积的膜层有更为完善的晶体结构。 In oMer to find a suitable method to deposit lead-germanium-telluride films, thin-films were deposited on silicon substrates using electron beam evaporation. The resource material is Pb0.78Ge0.22Te bulk ingot. X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive analysis by X-ray(EDAX)were used to investigate the microstructure and the stoichiometry of the thin-films. It is shown that thin-films of lead-germanium-telluride are polycrystalline and have a preferred orientation. It is also revealed that the grains appear as rectangles and no other phases and oxides are detected, it can be concluded that compared with resistance evaporation, high kinetic energy of particles evaporated by electron beam favor the formation of perfect crystalline in thin films.
出处 《光学仪器》 2010年第6期66-69,共4页 Optical Instruments
关键词 碲锗铅(Pb1-xGexTe) 电子束蒸发 光学薄膜 微结构 化学组分 lead-germanium-telluride electron beam evaporation thin-film microstructure stoichiometry
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参考文献7

  • 1ZHANG S Y,XU B Y,ZHANG F S,et al.Preparation of Pb1-xGexTe crystal with high refractive index for IR coating[J].SPIE,1991,1519:508-513.
  • 2ZHANG S Y,CHENG C,LING L,et al.The effects of processing conditions on PbGeTe film performances[J].SPIE,1998,3175:429-432.
  • 3张素英,范滨,李斌,张凤山,江锦春,承焕生.Pb_(1 - x) Ge_x Te薄膜的光学性质[J].红外与毫米波学报,2001,20(1):69-72. 被引量:4
  • 4李斌,张素英,谢平,张凤山.利用Pb_(1-x)Ge_xTe材料的折射率异常性质改善红外光学薄膜的低温性能[J].光学仪器,2004,26(2):168-173. 被引量:2
  • 5LI B,ZHANG S Y,JIANG J C,et al.Improving low-temperature stability of infrared thin-film interference filters utilizing the intrinsic properties of Ⅳ-Ⅵ narrow gap semiconductors[J].Opt Express,2004,12(3):401-404.
  • 6LI B,ZHANG S Y,JIANG J C,et al.Recent progress in improving low-temperature stability of infrared thin-film interference filters[J].Opt Express,2005,13(17):6376-6380.
  • 7LI B,ZHANG S Y,XIE P,et al.Improving low-temperature performance of infrared thin-film interference filters utilizing temperature dependence of refractive index of Pb1-xGexTe[J].SPIE,2005,5640:587-593.

二级参考文献20

  • 1张凤山 朱玲心 等.测量薄膜材料n,k,d的一种简单方法[J].红外研究,1986,3(5):189-189.
  • 2Feng W, Yan Y. Shift in infrared interference filters at cryogenic temperature[J]. Appl Opt, 1992, 31(31): 6591-6592.
  • 3Feng W, Yan Y. Spectral performance of multilayer filters at cryogenic temperature [J]. SPIE, 1992, 1765: 131-135.
  • 4Hohnke D K, Holloway H, Kaiser S. Phase relations and transformations in the system PbTe-GeTe [J]. J Phys Chem Solid, 1972, 33(11-E): 2053-2062.
  • 5Antcliffe G A, Bate R T, Buss D D. On the ferroelectric nature of the cubic-rhombohedral phase transition in Pb1-xGexTe [J]. Solid State Commun, 1973, 13(7): 1003-1006.
  • 6Katayama S, Murase K. Role of local displacement of Ge ions on structural instability in Pb1-xGexTe [J]. Solid State Commun, 1980, 36(8): 707-711.
  • 7Islam Q T, Bunker B A. Ferroelectric transition in Pb1-xGexTe: extended X-ray-absorption fine-structure investigation of the Ge and Pb sites [J]. Phys Rev Lett,1987, 59(23): 2701-2704.
  • 8Takaoka S, Murase K. Anomalous resistivity near the ferroelectric phase transition in (Pb, Ge, Sn) Te alloy semiconductors [J]. Phys Rev B, 1979, 20(7): 2823-2833.
  • 9Takano S, Kumashiro Y, Tsuji K. Resistivity anomalies in Pb1-xGexTe at low temperatures [J].J Phys Soc Jpn, 1984, 53(6): 4309-4314.
  • 10Jantsch W. Anomalies of the refractive index and the optical energy gap of ferroelectric Pb1-xGexTe [J]. Z Physik B-Condensed Matter, 1980, 40: 193-198.

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