摘要
分析推导了互补金属氧化物半导体(CMOS)电感电容振荡器的电压振荡幅度与相位噪声的关系.采用自动幅度控制电路控制射频CMOS电感电容振荡器,在0.18μm CMOS工艺下进行Candence SpectreRF仿真,在3.4 GHZ时,1 MHz频偏处相位噪声最差值采用自动幅度控制电路为-113.3 dBc/Hz,不采用自动幅度控制电路为-105.1 dBc/Hz.在不同频率下对振荡器相位噪声仿真结果表明,当频率变化从3.16~3.4 GHz时,采用自动幅度控制电路的相位噪声都低于不采用自动幅度控制电路的相位噪声.由此得出通过控制振荡器振动振幅,提高品质因数,可以降低振荡器相位噪声.
Relationship between voltage oscillation amplitude and phase noise was deducted and analyzed.A circuit was realized through 0.18μm CMOS process with the amplitude control circuit(AAC).The simulation was made with the Cadence design system SpectreRF simulator tool.The worst phase noise was -113.3 dBc/Hz with AAC and -105.1 dBc/Hz without AAC at 1 MHz away from 3.4 GHz,The simulation was made under different frequency,from 3.16 to 3.4 GHz.Phase noise of circuit with AAC was always lower than that without AAC. Results of simulation confirm that phase noise of oscillator circuit can be reduced through increasing quality factor by controlling voltage amplitude.
出处
《南开大学学报(自然科学版)》
CAS
CSCD
北大核心
2010年第6期99-103,共5页
Acta Scientiarum Naturalium Universitatis Nankaiensis
基金
天津市教委基金资助项目(SB20080048)