期刊文献+

基于MEMS技术研制RF硅基微电感线圈 被引量:1

RF Micro-inductor of Si Substrate Based on MEMS Technology
下载PDF
导出
摘要 在分析了硅基上金属线圈的串联电阻、金属层厚度等在低频和高频的情况下对Q的影响及原因的基础上,提出了一种在硅杯表面采用浓硼扩散区与镀金属膜形成的欧姆接触电极作为内引线的硅基电感的新制造方法。设计了硅基电感的版图尺寸和相关的工艺流程,用IntelliSuite软件模拟验证了工艺流程的可能性,再利用Ansys有限元软件中的电磁分析模块模拟了电流与磁感应强度的关系、衬底涡流分布等,为平面电感的理论与实验的进一步比较分析提供了参考依据。在研制过程中发现影响电感性能好坏的主要因素是衬底涡流效应,为此提出了在矩形硅杯膜上制作电感的方法,为了进一步减薄金属电感线圈衬底的厚度,在硅杯膜背面采用激光打孔得到了膜厚约为5μm的衬底,从而可以使衬底中的涡流大幅度减少、电感的Q值得到很大提高。此外,提出的新制造方法采用了绝缘性能比SiO2好的Al2O3薄膜作为电感线圈与衬底之间的绝缘层。结果表明,设计的平面螺旋电感具有制造工艺简单、与IC工艺相兼容的优点,有广泛的应用前景。 The factors on quality factor either in low or high frequency are analyzed in this paper,the kinds of inductor configurations,including suspend spiral inductors,solenoid inductors,vertical planar inductors are studied.A new kind of method of inductor fabrication is proposed,whose internal down-lead adopts ohm contact formed by the boron heavily doped region and the Au evaporated.The related fabrication process and the scale of mask for inductor on silicon,and validate the feasibility by the Intelli Suite soft are designed,then simulate the relations of carrent versus magnetic Flux Density by Ansys soft and the distribution of eddy are proposed.All of these simulations provide reference for further compare and analyse for theory and experiment of planar spiral inductor.During the process,the crucial factor of the performance of planar spiral indcuctor is found out,that is eddy effect on substrate.To fabricate the inductor on the silicon cup,then dig holes on the back of silicon cup by laser to further reduce substrate thickness.As a result,the substrate thickness reachs 5 μm,which can greatly reduce eddy effect and increase quality factor.Moreover,we adopt Al2O3 as the dielectric film between the coils and substrate,whose dielectric performance is better than SiO2.As conclusion shows that our planar spiral inductor has the advantages of simple technology and compatibility with IC technology,and that it has extensive future.
出处 《黑龙江大学工程学报》 2010年第4期78-83,共6页 Journal of Engineering of Heilongjiang University
基金 国家自然科学基金资助项目(60676044) 黑龙江省普通高等学校电子工程重点实验室项目(DZZD20100024)
关键词 MEMS 浓硼扩散区 内引线 激光打孔 硅基微电感 MEMS heavily doped region internal down-lead laser hole silicon-based inductor
  • 相关文献

参考文献20

  • 1王西宁,赵小林,周勇,蔡炳初.悬空结构射频微电感的制作研究[J].微细加工技术,2003(4):69-72. 被引量:3
  • 2X Rottenberg,,S Brebels,W De Raedt,et al.RF-power:Driver for Electrostatic RF-MEMS Devices. Mciromechanics and Microengineering . 2004
  • 3L.Zu,,Y.Lu.,R.C.Frye,,M.Y.Law,et al.HighQ-factor Inducto-rsintegrated on MCM Si Sub-strates. IEEETrans.Comp.Packag.Manu-fact.Technol.B . 1996
  • 4Long J,,Copeland MA.Modeling,Characterri-sation,and Design of Monolithic Inductors for Silicon RFICs. Proc CICC . 1996
  • 5Dekker R,Baltus P,van Deurzen M,et al.An Ultra-low Power RF Bipolar Technologyon Glass. Technical Digest International Electron Devices Meeting . 1996
  • 6Jinghong Chen,Jun Zou,Chang Liu,et al.Designand Modeling of A Micromachined High-QTunableCapacitor with Large Tuning Range and a Vertical Pla-nar Spiral Inductor. IEEE Tran.Electron De-vices . 2003
  • 7R. Fritschi,S.Frederico,C. Hiber,Ph Fluckiger, et al.High tuning range ALSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining. Microelectronics Journal . 2004
  • 8Liao C,Huang T H,Lee C Y,et al.Method of creating local semi -insulating regions on silicon wafers for device isolation and realization of high-Q inductors. IEEE Electron Device Letters . 1998
  • 9Liang Y C,Zeng W J,Ong P H,et al.A concise process technology for 3-D suspended radio frequency micro-inductors on silicon substrate. IEEE Electron Device Letters . 2003
  • 10Nguyen N M,Meyer R G.Si IC-compatible inductors and LC passive filters. IEEE Journal of Solid State Circuits . 1990

二级参考文献4

  • 1Chong H Ahn, Mark G Allen. Micro-machined planar inductors on silicon wafers for MEMS applications[J].IEEE Transactions on Industrial Electronics, 1998,45 (6): 866 - 876.
  • 2Belinda Piernas, Kenjiro Nishikawa,Kenji Kamogawa, et al. High-Q factor three-dimensional inductors[J].IEEE Transact ions on Microwave Theory and Techniques, 2002,50 (8): 1942 - 1949.
  • 3Yorgos K Koutsoyannopoulos, Yannis Papananos. Systematic analysis and modeling of integrated inductors and transfomers in RF IC design[J ]. IEEE Transactions on Circuits and System s-II :Analog and Digital Signal Processing, 2000,47 (8): 699 - 713.
  • 4王西宁,赵小林,周勇,蔡炳初.RF平面螺旋微电感的物理模型[J].微细加工技术,2003(1):57-60. 被引量:8

共引文献2

同被引文献5

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部