期刊文献+

Effective adjustment of the optoelectronic properties of organic conjugated materials by synthesizing p-n diblock molecules 被引量:3

Effective adjustment of the optoelectronic properties of organic conjugated materials by synthesizing p-n diblock molecules
原文传递
导出
摘要 Because organic conjugated materials offer several advantages relative to their inorganic counterparts,the development of organic conjugated materials has been one of the most active research areas in optoelectronic materials.For almost two decades,the search for organic conjugated materials has represented a major driving force for research concerned with controlling the band gap of extended π-conjugated molecules.In particular,among the parameters affecting the performance of organic light-emitting diodes (OLEDs),the energy levels of organic conjugated materials play an important role because they can affect the driving voltage,wavelength,efficiency,and lifetime of the final device.Balanced injection and transport of electrons and holes are therefore crucial for achieving OLEDs with high quantum efficiency.In this regard,research into adjusting the energy levels of organic conjugated materials is very meaningful for the development of OLEDs.To adjust the energy levels of the organic conjugated materials,Huang et al.have presented a new molecular design and synthesis route that yields p-n diblock conjugated copolymers and oligomers.The present review summarizes and analyzes the progress on adjusting the optoelectronic properties of organic conjugated materials that is due to synthesizing p-n diblock molecules.We discusses primarily work done by Huang et al.,but also discusses work done elsewhere over the past few years.We also point out issues that require attention,and highlight hot spots that require further investigation. Because organic conjugated materials offer several advantages relative to their inorganic counterparts, the development of organic conjugated materials has been one of the most active research areas in optoelectronic materials. For almost two decades, the search for organic conjugated materials has represented a major driving force for research concerned with controlling the band gap of extended n-conjugated molecules. In particular, among the parameters affecting the performance of organic light-emitting diodes (OLEDs), the energy levels of organic conjugated materials play an important role because they can affect the driving voltage, wavelength, efficiency, and lifetime of the final device. Balanced injection and transport of electrons and holes are there- fore crucial for achieving OLEDs with high quantum efficiency. In this regard, research into adjusting the energy levels of organic conjugated materials is very meaningful for the development of OLEDs. To adjust the energy levels of the organic conjugated materials, Huang et al. have presented a new molecular design and synthesis route that yields p-n diblock conjugated copolymers and oligomers. The present review summarizes and analyzes the progress on adjusting the optoelectronie properties of organic conjugated materials that is due to synthesizing p-n diblock molecules. We discusses primarily work done by Huang et ai., but also discusses work done elsewhere over the past few years. We also point out issues that require attention, and highlight hot spots that require further investigation.
作者 JIANG HongJi
出处 《Chinese Science Bulletin》 SCIE EI CAS 2011年第2期119-136,共18页
基金 supported by the National Basic Research Program of China(2009CB930601) the Key Project of the Ministry of Education(104246) the National Natural Science Foundation of China(20774043,60706017 and 20574012) the Creative Research Group of Jiangsu College Council(TJ207035 and TJ209035) the Natural Science Foundation of Jiangsu College Council(10KJB150012)
关键词 嵌段共聚物 结合材料 共轭分子 合成路线 光电性能 调整 有机发光二极管 能量水平 adjust, diblock, energy levels, organic light-emitting diodes, synthesize
  • 相关文献

参考文献4

二级参考文献103

  • 1姜鸿基,冯嘉春,温贵安,韦玮,徐筱杰,黄维.芴类电致发光材料研究进展[J].化学进展,2005,17(5):818-825. 被引量:30
  • 2姜桂元,温永强,吴惠萌,元文芳,商艳丽,高鸿钧,宋延林.超高密度电学信息存储研究进展[J].物理,2006,35(9):773-778. 被引量:3
  • 3Ishiwara H, Okuyama M. A survey of circuit innovations in ferroelectric random-access memories. Proc IEEE, 2000, 88:667-689.
  • 4Johnson M, Bennett B, Yang M. Hybrid ferromagnetic semiconductor nonvolatile gate. IEEE Trans Magn, 1998, 34:1054-1059.
  • 5Collier C P, Wong E W, Belohradsky M, et al. Electrically configurable molecular-based logic gates. Science, 1999, 285:391-394.
  • 6Lai S. Current status of the phase change memory and its future. Proc IEEE Int Electron Devices Meeting. 2003, 1-4.
  • 7Zhu Y, Zhao D T, Li R G, et al. Self-aligned TiSi2/Si heteronanocrystal nonvolatile memory. Appl Phys Lett, 2006, 88:103507.
  • 8Rueckes T, Kim K, Joselevich E, et al. Carbon nanotube-based nonvolatile random access memory for molecular computing. Science, 2000, 289:94-97.
  • 9Collier C P, Mattersteig G, Wong E W, et al. A [2]catenane-based sofid state electronically reconfigurable switch. Science, 2000, 289:1172-1175.
  • 10Ma D G, Aguiar M, Freire J A, et al. Organic reversible switching devices for memory application. Adv Mater, 2000, 12:1063-1066.

共引文献20

同被引文献12

引证文献3

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部