半导体桥火工品点火过程中桥体电压-电流特性

Semiconductor Bridge U-I Properties in Ignition Process

为研究半导体桥点火的特性,分析了半导体桥的结构特点和电阻特性,根据桥体的工作过程建立了半导体桥电特性的计算模型,对不同几何尺寸的桥体和相同尺寸下不同氧化层厚度的桥体进行数值模拟,分析了整个过程中半导体桥两端电压和电流的变化趋势.数值模拟得到3个不同桥体尺寸的电压-电流曲线.结果表明,桥体几何尺寸越大,达到熔点所需要的电压越高,即所需要消耗的输入能量越多.

To study the properties of Semiconductor Bridge（SCB）,the structure and the resistance properties of SCB were analyzed.The calculation model of the electrical properties of SCB was established based on the above factors,and the bridges with different dimension and different oxidation layer thickness were simulated respectively.The current and voltage trend during the process of SCB working was analyzed.By numerical calculation,the distribution curves of U-I properties were obtained,which were influenced by different dimension.The result shows that the bigger the bridge,the higher the voltage when the temperature reaches melting point,i.e.the more input energy.