电子束辐照a-Si的模拟计算

Simulation Calculation of Electron BeamIrradiation Amorphous Silicons

在分析了非晶硅（ａ－Ｓｉ）材料的模型后，提出了一种能够反映ａ－Ｓｉ材料结构特点的无规网络模型。以此模型为基础，用ＭｏｎｔｅＣａｒｌｏ方法模拟计算了能量为０．５～２．５ＭｅＶ的电子束与ａ－Ｓｉ的相互作用，得到了一些对电子辐照实验有参考价值的结果。

After analysing amorphous silicon(aSi),the paper puts forward a nonregular network model which can mirror the structure feature of aSi.We calculated the interaction between electron beam with energy from 05 to 25MeV and aSi by means of the Monte Carlo simulation and the nonregular network model,and obtained some results which would have some reference value to the electron irradiation experiments.