摘要
室温下，用直流磁控反应溅射方法在 Ｎ２ ／ Ａｒ 混合气体中淀积了 Ａｌ Ｎ 薄膜，所用衬底是（１００）面的半绝缘 Ｇａ Ａｓ 单晶片．研究了反应条件，如反应气压、反应气体配比、直流功率，对薄膜的物理性质和化学性质的影响．为了得到适于 Ｇａ Ａｓ Ｍ Ｅ Ｓ Ｆ Ｅ Ｔ 钝化的薄膜，还对反应条件进行了优化．
films have been deposited on GaAs(100) wafers by d.c.magnetron reactive sputtering in a mixed Ar/N\-2 discharge at room temperature.The effect of the preparation conditions (sputtering pressure,d.c.power and gas mixture) on the physical and chemical properties of the films is investigated.In order to get good AlN films used for GaAs MESFET passivation,the preparation condition is optimized. PACC:6855
