摘要
用电子束反应蒸发法制备的 ａ Ｓｉ∶ Ｈ 膜和 Ａｌ２ Ｏ３ 膜组成的 ａ Ｓｉ∶ Ｈ／ Ａｌ２ Ｏ３ 膜系，解决了 ａ Ｓｉ／ Ａｌ２ Ｏ３ 膜系在 ８０８ｎｍ 波长有较强光吸收问题，吸收系数从 ２×１０３ｃｍ － １ 降低到可以忽略的程度．ａ Ｓｉ∶ Ｈ 膜的光学带隙为 １７４ｅ Ｖ 左右．应用到 ８０８ｎｍ 大功率量子阱激光器腔面镀膜上。
Hydrogenated amorphous silicon (a\|Si∶H) with an optical bandgap of 1.74eV, deposited by electron beam reactive evaporation in H\-2 atmosphere has been used in combination with Al\-2O\-3 film as the facet reflector for high power 808nm quantum well laser. In comparison with usual film stack of a\|Si and Al\-2O\-3 shown strong optical absorption at wavelength of 808nm, the optical absorption coefficient of the new film system has been significantly lowered from 2×10\+3/cm to a negligible level. The optoelectronic properties of the device have been highly improved as the film system is applied to the facet. PACC:7865; EEACC:4190F
