期刊文献+

薄膜电致发光器件中电子的谷间分布 被引量:6

Intervalley Distribution of Electrons in Thin Film Electroluminescent Devices
下载PDF
导出
摘要 基于对谷间散射过程的讨论,利用 M onte Carlo 方法研究了 Zn S 型薄膜电致发光器件中电子的谷间分布.得出了谷间分布的瞬态过程、不同电场下的谷间分布.这些结果可作为研究电致发光过程的基本数据.同时。 Based on the discussion about intervalley scattering process,intervalley distribution in ZnS\|type thin film electroluminescent devices is investigated through Monte Carlo simulation.The transient process of intervalley transfer and the intervalley distribution under different electric fields are gained.These results could be used as the basic data on the study of electroluminescent process.Furthermore,we have proposed the energy storage effect of high valleys based on our calculations. PACC:7860, 7220
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1999年第8期702-705,共4页 半导体学报(英文版)
基金 国家"863"高技术计划资助
  • 相关文献

同被引文献58

  • 1疏小舟,吴砚瑞,陈效双,褚君浩.时域有限差分法模拟量子阱红外探测器光栅的光耦合(英文)[J].红外与毫米波学报,2004,23(6):401-404. 被引量:10
  • 2Huang Y S,Baliga B J. Extension of RESURF principle to dielectrically isolated power devices. Proc ISPSD, 1991 : 27.
  • 3Yasuhara N, Nakagawa A, Furukawa K. SOI device structures implementing 650V high voltage output devices on VL-SIs. IEDM Tech Dig, 1991:141.
  • 4Nakagawa A, Yasuhara N, Baba Y. Breakdown voltage enhancement for devices on thin silicon layer/silicon dioxide film. IEEE Tran Electron Devices, 1991,38(7): 1650.
  • 5Nakagawa A,Yamaguchi Y,et al. New high voltage SOI device structure eliminating substrate bias effects. IEDM Tech Dig, 1996:477.
  • 6Merchant S, Arnold E, et al. Realization of high breakdown voltage (>700V) in thin SOI devices. Proc ISPSD, 1991:31.
  • 7Merchant S,Arnold E,et al. Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS Transistors. Proc ISPSD,1993:124.
  • 8Merchant S. Analytical model for the electric field distribution in SOI RESURF and TMBS structures. IEEE Trans Electron Devices, 1999,46(6) : 1264.
  • 9Matsudai T,Nakagawa A. Simulation of a 700V high-voltage device structure on a thin SOL Proc ISPSD, 1992:272.
  • 10Bruel M,Aspar B,et al. Smart cut:a promising new SOI material technology. Proceedings of 1995 IEEE International SOI Conference, 1995 : 178.

引证文献6

二级引证文献17

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部