蓝紫色LD的远场特性仿真分析

Far-field characteristics simulation analysis of blue-violet LD

本文介绍了半导体激光器的发展过程和应用领域,以及基本工作原理。对蓝紫色半导体激光器的基本结构和远场特性进行了描叙,给出了远场模场表达式,计算出基于亥姆霍兹方程的严格远场解。根据远场模场表达式和严格远场解,应用CrossLight公司的LASTIP仿真软件,对蓝紫色LD(InGaN)的远场特性进行仿真,得到了蓝紫色LD的V-I特性图、P-I特性图、能带图、发散角图及远场特性图,并对结果进行了分析,最后得出了结论,对蓝紫色LD的实际应用有及其重要的指导作用和现实依据。

This paper introduce the development and applications of semiconductor laser, and the basic principle of semiconductor laser is also discussed.Then,the basic structure and far-field characteristics of blue-violet LD are described,and far-field model expressions are given,strict far-field root is calculated. According to the far-field root and far-field model expressions,and using the simulation software LASTIP of Crosslight company, the far-field characteristics of InGaN LD are simulated,and then the I-V curve ,P-V curve ,energy band curve , divergence angle curve and far field characteristics are also presented.The simulated results are analyzed and discussed,at last the conclusion is useful to actual applications of blue-violet LD.