Effect of Temperature on the Electronic Current of AIGaN/GaN High Electron Mobility Transistors （HEMT）
Effect of Temperature on the Electronic Current of AIGaN/GaN High Electron Mobility Transistors （HEMT）
出处
《材料科学与工程（中英文版）》
2011年第2期155-160,共6页
Journal of Materials Science and Engineering
AIGaN/GaN, mobility, threshold voltage, temperature.
参考文献22
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