荷能离子轰击固态材料形成孤立损伤的STM/SFM观测

STM/SFM investigation of individual damage induced by energetic ion

在广阔的能区内（从MeV到GeV）系统地研究了荷能离子轰击固态材料形成孤立损伤的形态及其形成机理。分别利用具有原子分辨能力的扫描隧道显微镜／扫描力显微镜观测了离子轰击导电和绝缘材料产生孤立损伤（或离子潜径迹）的形态、大小。通过运用核能损和电子能损的理论对实验结果的分析，研究了离子轰击固态材料形成各种损伤的过程与机理。

The features and the formation mechanism of the individual damage induced bythe energetic ions with a wide energy range from MeV to GeV were studiedsystematically. Scanning Tunneling Microscope (STM)/Scanning Force Microscope(SFM) with atomic resolution were used to observe and measure the feature and thesize of the damage in conductor and insulator, and also the relationship with theenergy deposition of incident ions in solids. In this work, the theory of two--bodycollision, thermal spike model and electronic excitation model were used to calculateand analyze the experimental results. It was found that these theoretical calculationsfitted well with the experimental data.