异质栅类MOS碳纳米场效应管中量子电容的影响

Effect of Quantum Capacitance in Dual-Gate-Material MOS-like Carbon Nanotube Field Effect Transistors

本研究小组提出的基于异质栅类MOS碳纳米场效应管器件设计结构不仅能增大开关电流比、调节阈值电压、降低器件功耗,而且还能有效消除传统类MOS碳纳米场效应管的双极性传输特性。但是,作为典型的低维系统,该新型器件设计不可避免地受到量子电容的影响。本文在分析其工作原理的基础上首次研究了量子电容对其传输特性的影响。研究结果表明,量子电容不仅能增大该新型器件的关断电流、减小开关电流比,而且还能破坏其单极性传输特性,给其在电路中的应用带来负面影响。本文最后给出了几点减少量子电容影响的建议。

The dualgatematerial MOSlike Carbon Nanotube Field Effect Transistors （CCNFETs） based device design, proposed by our research group, can not only increase the ONOFF current ratio, tune the subthreshold voltage, decrease the device power, but also eliminate the ambipolar transport property of the traditional MOSlike CNFETs effectively. However, as a typical lowdimensional system, such CCNFETs design suffers from the effect of quantum capacitance inevitably. In this paper, based on a study of the working principle of this novel device design, we make a first research into the effect of quantum capacitance on the transport property of it. The results show that quantum capacitance can not only result in a great increase of the OFF current and a corresponding decrease of the ONOFF current ratio, but also destroy the unipolar transport property of this novel device design, which would have a negative impact on its application in circuits. In order to decrease the impacts of quantum capacitance as greatly as possible, several suggestions are given at the end of the paper.