CuInS_2薄膜的单源热蒸发制备及其性能研究

Preparation and properties of CuInS_2 thin film deposited by single-source thermal evaporation

本文以烧结合成的CuInS2粉末为原料,采用单源热蒸发技术在玻璃基底上沉积CuInS2薄膜。随着退火温度的升高,薄膜的结晶性能增强,表现出高度的(112)晶面择优取向,SEM观察显示:350℃退火后,薄膜致密,晶粒细小,大小为数十纳米。同时,热探针测试发现:薄膜的导电类型为弱N型。光学性能方面,当退火温度高于250℃时,CuInS2薄膜的禁带宽度为1.50 eV,接近吸收太阳光谱所需的理想禁带宽度值。

CuInS2 thin film was deposited on the soda-lime glass substrate by single-source thermal evaporation process,where the CuInS2 powder as starting material was synthesized via vacuum sintering.With the increasing annealing temperature,the crystallinity of the film was improved with high（112） preferred orientation.The film annealed at 350℃ became compact with fine grain size down to dozens of nanometers.Moreover,the test result by thermal probe showed the weak N-type conductivity of the film.As to its optical property,the forbidden band width of the CuInS2 thin film annealed at higher than 250℃ is 1.50eV,ie.,approximates to the ideal forbidden band width which is necessary to absorb solar spectrum.