直流磁控溅射制备AlN薄膜的结构和表面粗糙度

Structure and Surface Roughness of AlN Thin Films Grown Processing by Direct Current Magnetron Sputtering

采用直流磁控反应溅射法,在Si(111)基底上成功制备了多晶六方相AlN薄膜.研究了溅射过程中溅射气压对薄膜结构和表面粗糙度的影响.结果表明:当溅射气压低于0.6 Pa时,薄膜为非晶态,在傅里叶变换红外光谱中,没有明显的吸收峰;当溅射气压不低于0.6 Pa时,薄膜的X射线衍射图中均出现了六方相的AlN(100)、(110)和弱的(002)衍射峰,说明所制备的AlN薄膜为多晶态,在傅里叶变换红外光谱中,在波数为677 cm-1处有明显的吸收峰;随着溅射气压的增大,薄膜表面粗糙度先减小后增大,而薄膜的沉积速率先增大后减少,且沉积速率较大有利于减小薄膜的表面粗糙度;在溅射气压为0.6 Pa时,薄膜具有最小的表面粗糙度和最大的沉积速率.

Polycrystalline hexagonal AlN thin films were prepared by DC magnetron reactive sputtering on Si（111） substrates.The influences of sputtering pressure on structure and surface roughness of the AlN thin films were investigated.The results show that：when the sputtering pressure is less than 0.6 Pa,the AlN thin films are amorphous and there is no obvious absorption in the Fourier transformation infrared spectra;when the sputtering pressure is no less than 0.6 Pa,the thin films are polycrystalline structure with the hexagonal phase（100）,（110） and weak（002） peaks and an intense absorption exits at 677 cm-1 of wavenumber in the Fourier transformation infrared spectra;when the sputtering pressure increases,the surface roughness of the thin films decreases firstly then increases,while the deposition rate increases firstly then decreases,and the higher deposition rate can help to reduce the surface roughness of thin films;it has the minimum surface roughness and the maximum deposition rate when the sputtering pressure is 0.6 Pa.