硅基GaN外延层的SIMS及XPS研究

SIMS and XPS Studies of GaN Epilayers Grown On Si Substrates

采用真空反应法在硅基上制备出了GaN外延层。利用二次离子质谱和X射线光电子能谱对GaN外延层进行了深度剖析和表面分析。结果表明 ,外延层中Ga和N分布均匀 ;在表面处Ga发生了偏聚 ;外延层中还存在Si,O等杂质 ,但这些并未影响到GaN外延层的物相及发光性能。实验还表明 。

GaN epilayers were grown on Si substrates by reactive deposition in vacuum.The depth profile and surface composition of the GaN films were studied with secondary ion mass spectroscopy and X ray photoelectron spectroscopy.The results show that Ga atoms segregate to the surface,whereas below the surface layers Ga and N atoms uniformly distribute in the epilayers.Si and O impurities existing in the epilayers do not affect crystal phase and photoluminescence of the GaN epilayers. In situ cleaning can effectively remove surface oxygen on the Si substrate.