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伽玛辐照对SiGe异质结双极型晶体管的集电极电流和厄尔利电压的影响(英文) 被引量：3

Gamma irradiation effects on collector current and Early voltage of SiGe heterojunction bipolar transistor
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摘要 研究了伽玛辐照效应对SiGe异质结双极型晶体管的集电极电流和厄尔利电压的影响。经过104Gy的伽玛总剂量辐照后,集电极电流和厄尔利电压均增加。另外,辐照后发射结和极电结的开启电压和击穿电压也均有一定程度的减小。以上这些变化均是由于辐照产生的缺陷引起发射区和集电区有效掺杂浓度减小所致。 The effects of gamma irradiation on collector current and Early voltage of silicon-germanium（SiGe） heterojunction bipolar transistor are investigated.After 104 Gy（Si） total dose irradiation,increases of the collector current and Early voltage are observed.Besides,both the threshold voltages and the breakdown voltages of the emitter-base and the collector-base junctions decrease.All the changes are thought to be mainly due to the reduction of effective carrier concentrations in the emitter and collector regions caused by radiation-induced defects.
作者 温景超 石瑞英 龚敏 唐龙谷 田野 谭开州 蒲林
机构地区 四川大学物理科学与技术学院 微电子技术四川省重点实验室 模拟集成电路国家重点实验室
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2011年第2期545-549,共5页 High Power Laser and Particle Beams
基金 Supported by National Laboratory of Analog Integrated Circuits of China(51439040105SC02)
关键词 异质结双极型晶体管 自建电势 掺杂浓度 集电极电流 厄尔利电压 伽玛辐照 heterojunction bipolar transistor built-in electric potential doping concentration collector current Early voltage gamma irradiation
分类号 TN32 [电子电信—物理电子学] O571.33 [理学—粒子物理与原子核物理]
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参考文献15

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同被引文献19

  • 1牛振红,郭旗,任迪远,刘刚,高嵩.SiGe HBT^(60)Coγ射线辐照效应及退火特性[J].Journal of Semiconductors,2006,27(9):1608-1611. 被引量：4
  • 2CressLer J D. SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications[J]. IEEE Trans on Microwave Theory and Techniques, 1998, 46(5): 572-589.
  • 3Cressler J D. On the potential of SiGe HBTs for extreme environment electronics[J]. Proceedings of the IEEE, 2005, 93(9) : 1559-1582.
  • 4Cressler J D. Using SiGe technology in extreme enviroments[R]. NASA NEPP Electronics Technology Workshop, 2010.
  • 5Ryan M D. Silicon germanium BiCMOS device and circuit design for extreme environment applications[D]. Georgia: Georgia Institute of Technology, 2009.
  • 6Aravind A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments[D]. Georgia: Georgia Institute of Technology, 2010.
  • 7Yang H. 3D device simulation of SEU-induced charge collection in 200 GHz SiGe HBTs[D]. Alabama: Auburn University, 2005.
  • 8Muthubalan V. 3D simulation of SEU in SiGe HBTS and radiation hardening by design[D]. Alabama: Auburn University, 2010.
  • 9刘亮,王玉琦,肖波,等.新结构微波功率SiGeHBT的数值分析[J].半导体学报,1998,19(4):261-266.
  • 10Jonathan A P. Bulk silicon-germanium heterojunction bipolar transistor process feature implications for single-event effects analysis and charge collection mechanisms[D]. Tennessee: Vanderbilt University, 2005.

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强激光与粒子束
2011年 第2期

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