摘要
研究了伽玛辐照效应对SiGe异质结双极型晶体管的集电极电流和厄尔利电压的影响。经过104Gy的伽玛总剂量辐照后,集电极电流和厄尔利电压均增加。另外,辐照后发射结和极电结的开启电压和击穿电压也均有一定程度的减小。以上这些变化均是由于辐照产生的缺陷引起发射区和集电区有效掺杂浓度减小所致。
The effects of gamma irradiation on collector current and Early voltage of silicon-germanium(SiGe) heterojunction bipolar transistor are investigated.After 104 Gy(Si) total dose irradiation,increases of the collector current and Early voltage are observed.Besides,both the threshold voltages and the breakdown voltages of the emitter-base and the collector-base junctions decrease.All the changes are thought to be mainly due to the reduction of effective carrier concentrations in the emitter and collector regions caused by radiation-induced defects.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2011年第2期545-549,共5页
High Power Laser and Particle Beams
基金
Supported by National Laboratory of Analog Integrated Circuits of China(51439040105SC02)
关键词
异质结双极型晶体管
自建电势
掺杂浓度
集电极电流
厄尔利电压
伽玛辐照
heterojunction bipolar transistor
built-in electric potential
doping concentration
collector current
Early voltage
gamma irradiation