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掺杂Sb_2O_3的SnO_2基陶瓷的SPS制备及性能研究

Property and Spark Plasma Sintering of Antimony-Doped Tin Oxide Ceramics
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摘要 采用放电等离子烧结技术(SPS)制备了掺Sb2O3的SnO2基陶瓷。研究了烧结温度及Sb2O3的含量对SnO2基陶瓷的密度、物相、结构和电学性能的影响。研究表明:随着烧结温度的提高,SnO2基陶瓷的相对密度逐渐增大,室温电阻率呈先减小后增大的趋势;随着Sb2O3掺杂量的增加,样品的相对密度呈先增加后减小的趋势,室温电阻率先减小后增大,烧结温度950℃,Sb2O3掺杂量0.5%时,室温电阻率达到极小值,2.35×10-2Ω.cm。分析认为,SPS烧结和Sb在SnO2中固溶对SnO2基陶瓷的致密化和导电性起到了作用。 The spark plasma sintering (SPS) technique was used to fabricate antimony-doped tin oxide ceramics. The effects of sintering temperature and Sb2O3 contents on the relative density, electrical properties, and structure of SnO2-based ceramics have been studied. The results showed that: with the increase of sintering temperature, the relative density of SnO2-based ceramic increased and the resistivity of SnO2-based ceramic at room temperature decreased first and then increased. With the increase of the content of Sb2O3 doping, the relative density of the sample increased first and then decreased and the resistivity of SnO2-based ceramic at room temperature sharply decreased and then gradually increased. Resistivity at room temperature of the sample reached minimum value 2.35 ×10^-2Ω·cm when the concentration of Sb203 was 0.5 mol % and the sintering temperature was 950 ℃. The reason was that SPS sintering and Sb dissolved into SnO2 contribute to density and conductivity of SnO2 ceramics.
出处 《广东化工》 CAS 2011年第2期6-8,共3页 Guangdong Chemical Industry
基金 湖北省创新团队项目(2008CDA011)
关键词 二氧化锡 三氧化二锑 SPS 相对密度 室温电阻率 tin dioxide antimony trioxide SPS relative density resistivity at room temperature
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参考文献9

  • 1薄占满,徐廷献,曲远方,胡宗民,程志捷,段兴龙.导电陶瓷的研究[J].硅酸盐通报,1992,11(5):15-19. 被引量:6
  • 2俞康泰,张叔梅,简国忠.锡锑半导体釉配方及工艺的研究[J].电瓷避雷器,1992(4):3-9. 被引量:3
  • 3Foschini C R,Perazolli L,Varela J A.Sintering of tin oxide using zinc oxide as a densification aid[J]. Journal of Materials Science, 2004, 39(18): 5825-5830.
  • 4Dole N, HeintzJ M, Onillon M, et al. Densification of 0.99SnO2-0.01CuO mixture: evidence for liquid phase sintering[J]. Journal of the European Ceramic Society, 1992, 9: 19-25.
  • 5Scarlat O, Mihaiu S, Aldica G H, et al. Enhanced properties of tin oxide (IV) based materials by field activated sintering[J]. Journal of the American Ceramic Society, 2003, 86(6): 93-897.
  • 6Gao L, Shen Z J, Miyamoto H, et al. Superfast Densification of Oxide/Oxide Ceramic Composites[J]. J Am Ceram Soc, 1999, 82(4): 1061.
  • 7Woong J P, Wook J, Doh Y K. Enhanced densification of pure SnO2 by spark plasma sintering[J]. Journal of Materials Science, 2005,40: 3825-3827.
  • 8薄占满.掺Sb二氧化锡半导体导电机理的实验探讨[J].无机材料学报,1990,5(4):324-329. 被引量:69
  • 9杨建广,唐谟堂,张保平,杨声海,陈艺峰.锑掺杂二氧化锡导电机理及制备方法研究现状[J].中国粉体技术,2004,10(1):38-43. 被引量:10

二级参考文献27

  • 1张叔梅,俞康泰,应瑞芳,方东.固溶Sb_2O_5型SnO_2系半导体釉的导电性与显微结构的关系[J].电瓷避雷器,1990(3):8-14. 被引量:3
  • 2[1]Evans C J. Manyusesofiindioxide [J]. TinandUses. 1983, 17(132): 5-8.
  • 3[2]DanielBJacobs, YulongShen, GeorgeGMalliaras. Characterizationand improvement of the contact between indium fin oxide and triphenyl diamine-doped polycarbonate[J]. Journal of Photochemistry and PhotobiologyA: Chemistry, 2001, 144:53-55.
  • 4[3]HenryaBM, Erlata A G, McGuiganaA. Characterization of transparent aluminum oxide and indium tin oxide layers on polymer substrates [J].Thin Solid Films, 2001, [382]: 194 - 201.
  • 5[4]Ching-TingLeea, Qing-XuanYub. Effects ofplasma treatment ontheelectrical and optical properties of indium tin oxide films fabricated by r. f.reactive sputtering [J]. Thin Solid Films, 2001, 386:105 - 110.
  • 6[5]Marcela C, Hegde M S. Electrochromic properties of antimony tin oxide[ATO]thinfilmssynthesizedbypulsedlaserdeposition[J]. Electrochimica Acta, 2001,46:2097 - 2104.
  • 7[7]Utz J P, Gang D, Gasparro G, et al. Influence of the heating rate on the microstructure and on macroscopic properties of sol - gel SnO2: Sb coatings[J]. JournalofSol - Gel Science and Technology, 1998, 13:1005 - 1010.
  • 8[8]PotdarHS, DeshpandeSB. Simplifiedchemicalrouteforthesynthesisof barium titanyl oxalate [BTO][J]. International Journal of Inorganic Materials, 2001, 3: 613- 623.
  • 9[14]ColemanJP, FreemanJJ. Electrochromismofnanoparticulate-doped metal oxides: optical and material properties[J]. Displays, 1999, 20:145 - 154.
  • 10[15]Bisht H, Eun H T, Aegerter M A. Comparison of spray pyrolyzed FTO,ATO and ITO coatings forat and bent glass substrates [J]. Thin Solid Films, 1999, 351: 109-111.

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