摘要
采用放电等离子烧结技术(SPS)制备了掺Sb2O3的SnO2基陶瓷。研究了烧结温度及Sb2O3的含量对SnO2基陶瓷的密度、物相、结构和电学性能的影响。研究表明:随着烧结温度的提高,SnO2基陶瓷的相对密度逐渐增大,室温电阻率呈先减小后增大的趋势;随着Sb2O3掺杂量的增加,样品的相对密度呈先增加后减小的趋势,室温电阻率先减小后增大,烧结温度950℃,Sb2O3掺杂量0.5%时,室温电阻率达到极小值,2.35×10-2Ω.cm。分析认为,SPS烧结和Sb在SnO2中固溶对SnO2基陶瓷的致密化和导电性起到了作用。
The spark plasma sintering (SPS) technique was used to fabricate antimony-doped tin oxide ceramics. The effects of sintering temperature and Sb2O3 contents on the relative density, electrical properties, and structure of SnO2-based ceramics have been studied. The results showed that: with the increase of sintering temperature, the relative density of SnO2-based ceramic increased and the resistivity of SnO2-based ceramic at room temperature decreased first and then increased. With the increase of the content of Sb2O3 doping, the relative density of the sample increased first and then decreased and the resistivity of SnO2-based ceramic at room temperature sharply decreased and then gradually increased. Resistivity at room temperature of the sample reached minimum value 2.35 ×10^-2Ω·cm when the concentration of Sb203 was 0.5 mol % and the sintering temperature was 950 ℃. The reason was that SPS sintering and Sb dissolved into SnO2 contribute to density and conductivity of SnO2 ceramics.
出处
《广东化工》
CAS
2011年第2期6-8,共3页
Guangdong Chemical Industry
基金
湖北省创新团队项目(2008CDA011)
关键词
二氧化锡
三氧化二锑
SPS
相对密度
室温电阻率
tin dioxide
antimony trioxide
SPS
relative density
resistivity at room temperature