摘要
Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes.
