High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates 被引量：2

High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates

导出

摘要 Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details.

作者 M.BOKOWSKI I.GRZEGORY B.LUCZNIK T.SOCHACKI M.KRYKO G.KAMLER S.POROWSKI

机构地区 Institute of High Pressure Physics PAS

出处《Science China(Technological Sciences)》 SCIE EI CAS 2011年第1期42-46,共5页 中国科学（技术科学英文版）

基金 supported by the European Union within European Regional Development Fund,through grant Innovative Economy (POIG.01.01.02-00-008/08)

关键词 High Nitrogen Pressure Solution （HNPS） growth seeded growth Hydride Vapor Phase Epitaxy （HVPE） growth 氮化镓晶体生长压溶高氮自由站氢化物气相外延基板 HVPE

分类号 TN304.054 [电子电信—物理电子学]

引文网络
相关文献

参考文献12

1Motoki K,,Okahisa T,Hirota R, et al.Dislocation reduction in GaN crystal by advanced-DEEP. Journal of Crystal Growth . 2007
2Yoshida T,Oshima Y,Eri T, et al.Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method. Journal of Crystal Growth . 2008
3Dwiliński R,Doradziński R,Garczyński J, et al.Excellent crystallinity of truly bulk ammonothermal GaN. Journal of Crystal Growth . 2008
4Hashimoto T,Wu F,Speck J S, et al.Ammonothermal growth of bulk GaN. Journal of Crystal Growth . 2008
5Hussy S,Meissner E,Berwian P, et al.Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inch. Journal of Crystal Growth . 2008
6Grzegory I,Bockowski M,Porowski S. Bulk Crystal Growth of Electronic, Optical and Optoelectronic Materials . 2005
7Bockowski M,Strak P,Grzegory I, et al.Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science 133 . 2010
8Bockowski M,Grzegory I,Krukowski S, et al.Directional crystalliza- tion of GaN on high-pressure solution grown substrates by growth from solution and HVPE. Journal of Crystal Growth . 2002
9Lucznik B,Pastuszka B,Kamler G, et al.Technology of Gallium Nitride Crystal Growth. Springer Series in Materials Science 133 . 2010
10Bockowski M,Grzegory I,Krukowski S, et al.Deposition of bulk GaN from solution in gallium under high N2 pressure on silicon carbide and sapphire substrates. Journal of Crystal Growth . 2004

同被引文献41

1XU ZhaoDong,SHI BenQiang,WU KeYi,ZENG Xiao.Vertical shaking table tests on the structure with viscoelastic multi-dimensional earthquake isolation and mitigation devices[J].Science China(Technological Sciences),2009,52(10):2869-2876. 被引量：4
2TONG GuoXiu1,2, GUAN JianGuo2, WU WenHua1, LI LiangChao1, GUAN Yao2 & HUA Qiao1 1 College of Chemistry and Life Sciences, Zhejiang Normal University, Jinhua 321004, China,2 State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China.Preparation and electrochemical properties of urchin-like α-Fe_2O_3 nanomaterials[J].Science China(Technological Sciences),2010,53(7):1897-1903. 被引量：1
3GUAN XiaoJin1,2, WANG YinShun1 & ZHOU WeiWei3 1 Key Laboratory of HV and EMC Beijing, North China Electric Power University, Beijing 102206, China,2 Department of Physics, Baoding University, Baoding 071000, China,3 Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China.Current distribution and stability of LTS/HTS hybrid superconducting conductors[J].Science China(Technological Sciences),2010,53(7):2000-2007. 被引量：6
4CHU JinKui1,2,MENG FanTao1,2,HAN ZhiTao1,2 & GUO Qing1,2 1 Key Laboratory for Micro/Nano Technology and System of Liaoning Province,Dalian University of Technology,Dalian 116024,China,2 Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116024,China.Large area mold fabrication for the nanoimprint lithography using electron beam lithography[J].Science China(Technological Sciences),2010,53(1):248-252. 被引量：6
5WU ChenWu, HUANG ChenGuang & CHEN GuangNan Institute of Mechanics, Chinese Academy of Sciences, Beijing 100190, China.Interface delamination of the thermal barrier coating subjected to local heating[J].Science China(Technological Sciences),2010,53(12):3168-3174. 被引量：7
6WANG JiaXing, WANG Lai, ZHAO Wei, ZOU Xiang & LUO Yi National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.Study on internal quantum efficiency of blue InGaN multiple-quantum-well with an InGaN underneath layer[J].Science China(Technological Sciences),2010,53(2):306-308. 被引量：3
7WU ChaoMin1, SHANG JingZhi1, ZHANG BaoPing1,2, ZHANG JiangYong1,3, YU JinZhong1,3 & WANG QiMing1,31 Department of Physics and Semiconductor Photonics Research Center, Xiamen University, Xiamen 361005, China,2 Pen-Tung Sah Micro/Nano Technology Research Center, Xiamen University, Xiamen 361005, China,3 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.Impact of thickness of GaN buffer layer on properties of AlN/GaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition[J].Science China(Technological Sciences),2010,53(2):313-316. 被引量：2
8ZHU HaiTao1, LI ChangJiang2, WU DaXiong1, ZHANG CanYing1 & YIN YanSheng2 1 College of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao 266042, China,2 Department of Materials, Ocean University of China, Qingdao 266003, China.Preparation, characterization, viscosity and thermal conductivity of CaCO_3 aqueous nanofluids[J].Science China(Technological Sciences),2010,53(2):360-368. 被引量：7
9WU ZhiMing,LIN XianGan,HUANG Kai,LI ShuPing&KANG JunYong Key Laboratory of Semiconductors and Applications,Department of Physics,Xiamen University,Xiamen 361005,China.Density-controlled growth of well-aligned ZnO nanowires using chemical vapor deposition[J].Science China(Technological Sciences),2010,53(3):766-768. 被引量：1
10CHEN KeFan,DENG JianHua,ZHAO Fei,CHENG GuoAn &ZHENG RuiTing Key Laboratory of Beam Technology and Material Modification of Ministry of Education,College of Nuclear Science and Technology,Beijing Normal University,Beijing100875,China.Influence of Zn ion implantation on structures and field emission properties of multi-walled carbon nanotube arrays[J].Science China(Technological Sciences),2010,53(3):776-781. 被引量：1

引证文献2

1TANG Mei,GUO YingQing,YUAN Jie,WEI Qin,SUN ShuJun,ZHOU Wei,ZHANG Yue.Review of some recent progress on materials science researches in China[J].Science China Chemistry,2012,55(12):2497-2502. 被引量：5
2周明斌,李振荣,范世马岂,徐卓,熊志华.GaN体单晶生长研究进展[J].中国照明电器,2017(9):7-14. 被引量：1

二级引证文献6

1FAN LingCong,XU Jian,SHI Ying,XIE JianJun,LEI Fang.Lower temperature synthesis of cerium-doped polycrystalline lutetium pyrosilicate powders by a novel sol-gel processing[J].Science China(Technological Sciences),2014,57(8):1610-1615. 被引量：3
2SHEN JunHai,CHEN KeYu,LI LiangChao,DING Yan,LI JuanBi,KONG WeiQiu.Fabrication of Z-type barium ferrite/silica composites with enhanced microwave absorption[J].Science China(Technological Sciences),2014,57(9):1858-1864.
3CHENG XingGuo,LI FuAn,ZHANG ZongYang,LIU Sheng.Design, optimization, and measurement of closed-loop Hall effect current sensor[J].Science China(Technological Sciences),2014,57(9):1877-1882. 被引量：3
4DONG YinMao,TANG DongYan,LI ChenSha.The impact of solvent and modifier on ZnO thin-film transistors fabricated by sol-gel process[J].Science China(Technological Sciences),2014,57(11):2153-2160. 被引量：1
5LU LinLin,CAO BaoLi,ZHANG LiBo,TANG Song,LI LianYan,LI SiMin,SHI YueChun,CHEN XiangFei.Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure[J].Science China(Technological Sciences),2014,57(11):2231-2235. 被引量：4
6刘宇伦,唐子媚,鲁姣,翁瑶,陆珊珊,莫祖康,谢武林,何欢,符跃春,沈晓明.脉冲激光沉积法(PLD)制备InGaN薄膜的膜厚分布特征[J].广西科学,2017,24(6):556-560.

1颜怀跃,修向前,华雪梅,刘战辉,周安,张荣,谢自力,韩平,施毅,郑有炓.Optical and Structural Properties of Cr-Doped GaN Grown by HVPE Method[J].Chinese Physics Letters,2010,27(12):184-187.
2Pengcheng Jia.Broadband Power Amplifiers for Unified Base Stations[J].ZTE Communications,2011,9(2):8-11.
3黄永楷,徐竞熙,C.A.Massone.输出功率不随氮比气压而变的无水冷CO_2激光器[J].中国激光,1991,18(9):646-648.
4张雷,邵永亮,吴拥中,张浩东,郝霄鹏,蒋民华.HVPE生长室气流分布模拟及GaCl载气流量对GaN单晶生长的影响[J].人工晶体学报,2011,40(4):853-857. 被引量：4
5CUI AJuan,HAO TingTing,LI Wu Xia,SHEN TieHan,LIU Zhe,JIANG QianQing,GU ChangZhi.The concept and realization of nanostructure fabrication using free-standing metallic wires with rapid thermal annealing[J].Science China(Physics,Mechanics & Astronomy),2015,58(4):84-90.
6王新中,李世国.氮化镓晶体刻蚀损伤及其回复方法研究[J].深圳信息职业技术学院学报,2011,9(3):6-9.
7何小玲,张昌龙,周海涛,左艳彬,覃世杰,王金亮.氮化镓晶体的氨热法生长进展[J].人工晶体学报,2013,42(7):1293-1298.
8Lutang Fu Zhigang Chen Hongtao Cong.Synthesis of GaPO_4-GaN Coaxial Nanowires[J].Journal of Materials Science & Technology,2010,26(1):15-19.
9Wei Fan,Miao Yue-E,Xingyi Ling,Tianxi Liu.Free-Standing Silver Nanocube/Graphene Oxide Hybrid Paper for Surface-Enhanced Raman Scattering[J].Chinese Journal of Chemistry,2016,34(1):73-81. 被引量：3
10冯倩,段猛,郝跃.SiC衬底上异质外延GaN薄膜XPS谱和PL谱研究[J].光子学报,2003,32(12):1510-1513. 被引量：5

Science China(Technological Sciences)

2011年第1期

浏览历史

内容加载中请稍等...

High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates 被引量：2

参考文献12

同被引文献41

引证文献2

二级引证文献6

相关作者

相关机构

相关主题

浏览历史