TiN薄膜表面离子注入层微观结构的分析研究

Study on the Microstructure of the Implanted TiN Films

利用磁过滤阴极电弧镀分别在硬质合金和高速钢基体上沉积厚度约2～3μm的TiN薄膜,并用MEVVA源离子注入装置对TiN薄膜注入金属离子V+和Nb+。应用北京同步辐射装置(BSRF)的同步辐射光源,采用掠入射X射线衍射(GIXRD)的方法对TiN薄膜表面离子注入层的微观结构进行了分析研究。结果表明:未经过离子注入的TiN薄膜均存在特定方向的择优取向,而较小剂量(1×1017ions/cm2)的离子注入可以使晶粒细化、择优取向减弱或改变;当离子注入的剂量达到5×1017ions/cm2时,TiN薄膜表面离子注入层被非晶化。结合透射电镜的研究结果,观察到TiN薄膜表面非晶层的厚度约为50～100 nm,并简要地讨论了离子注入过程对微观结构的影响机制。

The synchrotron radiation grazing incident X-ray diffraction（GIXRD） method was employed to investigate the microstructure of the surface layer of TiN films, which had been deposited on the cemented carbide （WC-Co） and high speed steel （Fe-Cr）, respectively, by Magnetron Filtration Arc Ion Plating. The deposition thickness of TiN films is about 2 - 3 μm, and TiN films were implanted with V^＋ or Nb^＋ by MEVVA ions source. The results showed that the original TiN films without being implanted with V^＋ or Nb^＋ ions both had a preferred orientation of specific direction depending on the substrate. while the grain size of TiN film implanted at smaller dosage （1 ×10^17ions/cm^2 ） had been fined and the preferred orientation had been weakened or changed. An amorphous layer occurred in the ion implantation zone of TiN film, when the dosage of ion implantation reached 5×10^17ions/cm^2. Combining with the test results of TEM（Transmission Electron Microscopy）, the amorphous layer of TiN film was observed to be 50-100 nm,and the mechanism of ion implantation＇ s affection on TiN film was briefly discussed thereafter.