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Novel photoresist stripping technology using steam-water mixture

Novel photoresist stripping technology using steam-water mixture
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摘要 A novel wet vapor photoresist stripping technology is developed as an alternative to dry plasma ashing and wet stripping. Experiments using this technology to strip hard baked SU-8 photoresist, aurum and chromium film are carried out. Then the images of stripping results are shown and the mechanism is analyzed and discussed. The most striking result of this experiment is that the spraying mixture of steam and water droplets can strip pho- toresist and even metal film with ease. A novel wet vapor photoresist stripping technology is developed as an alternative to dry plasma ashing and wet stripping. Experiments using this technology to strip hard baked SU-8 photoresist, aurum and chromium film are carried out. Then the images of stripping results are shown and the mechanism is analyzed and discussed. The most striking result of this experiment is that the spraying mixture of steam and water droplets can strip pho- toresist and even metal film with ease.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第2期142-148,共7页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.60976017)
关键词 photoresist stripping plasma ash wet stripping steam-water mixture jet spray photoresist stripping plasma ash wet stripping steam-water mixture jet spray
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  • 1Heyns M, Martens P W, Ruzyllo J, et al. Advanced wet and dry cleaning coming together for next generation. Solid State Tech- nol, 1999, 42:37.
  • 2DeKraker D, Pasker B, Butterbaugh J W, et al. Steam-injected SPM process for all-wet stripping of implanted photoresist. Solid State Phenomona, 2009, 145/146:277.
  • 3Kashkoush I I, Matthews R, Novak P E. Photoresist stripping us- ing ozoner/deionized water chemistry. Proceedings of the Fifth International Symposium on Cleaning Technology in Semicon- ductor Device Manufacturing, Paris, France, 1997:471.
  • 4DeGendt S, Snee P, Cornelissen I, et al. A novel resist and post- etch residue removal process using ozonated chemistry. Solid State Phenomena, 1999, 65(6): 165.
  • 5Abe H, Iwamoto H, Toshima T, et al. Novel photoresist stripping technology using ozone/vaporized water mixture. IEEE Trans Semicond Manuf, 2003, 16(3): 401.
  • 6Clark P G, Christenson K K. Non-damaging chemical photoresist strip process for copper/low-k interconnects. Advanced Semi- conductor Manufacturing Conference, 2005:1.
  • 7Metselaar J W, Kuznetsov V I, Zhidkov A G. Photoresist strip- ping in afterglow of A~O2, microwave plasma. J Appl Phys, 1994, 75:4910.
  • 8Choi K, Ghosh S, Lim J, et al. Removal efficiency of organic contaminants on Si wafer by dry cleaning UV/O3 and arc plasma. Appl Surf Sci, 2003, 206:355.
  • 9Rubin J B, Davenhall L B, Barton J, et al. A comparison of chilled DI water/ozone and CO2-based supercritical fluids as re- placements for photoresist-stripping solvents. Proceedings of the Twenty-Third International Symposium on Electronics Manufac- turing Technology Symposium, Austin, TX, 1998:308.
  • 10Rubin J B, Davenhall L B, Taylor C M V, et al. Carbon dioxide- based supercritical fluids as IC manufacturing solvents. IEEE International Symposium on Electronics and the Environment, Danvers, MA, 1999.

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