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大功率变流器系统H桥低感叠层母线排设计

Configuration of Low Inductive Laminated Bus Bar in H-bridge of High Power Converter System
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摘要 针对80kVA/400A变流器H桥母线排的设计要求,使用ANSOFT MAXWELL有限元分析软件比较了不同设计原则下杂散电感参数的变化,并提出了一种新型的优化母线排结构,较少了IGBT模块的关断过冲电压,并优化了高频电流的分布。通过仿真和实验分别证实了新型母线排的良好测试结果,最后给出了系统结构和实验波形。 For the design requirements of 80kVA/400A H-bridge converter busbars,this paper compared the changes of the stray inductance under different design parameters using the finite element analysis software ANSOFT MAXWELL,and proposes a new optimistic configuration of busbar structure,it can reduce the voltage overshoots of the IGBT,optimize the high-frequency current distribution.the new type of busbar was Confirmed by simulation and experiment to be a good test results.Finally provided the system structure and experimental waveforms.
作者 王晓辉 张晓 孙新贺
机构地区 中国矿业大学信息与电气工程学院
出处 《变频器世界》 2011年第1期82-84,共3页 The World of Inverters
基金 江苏省省级科技创新与成果转化-大功率高性能中压变频传动装备开发及产业化(BA2008029)
关键词 叠层母线 过电压 均流 杂散电感 电磁兼容 Laminated busbar Overshoot voltage Current balance Stray inductance Electromagnetic compatibility（EMC）
分类号 TM46 [电气工程—电器]
  • 相关文献

参考文献3

  • 1Beukes H J,Enslin J H R, Spee R. Bus bar design consideration for high power IGBT converters[C]. IEEE Power Electronics Specialists Conference,St. Louis, Missouri, USA, 1997.
  • 2易荣,赵争鸣.受杂散电感影响的大容量变换器中IGCT关断特性研究[J].中国电机工程学报,2007,27(31):115-120. 被引量：31
  • 3G. L. Skibinski, D. M. Divan, "Design Methodology and Modeling of Low- Inductance Planar Bus Structure," EPE 1993, pp. 98-105.

二级参考文献18

  • 1Steimer P K, Gruning H E, Weminger J, et al. IGCT-a new emerging technology for high power low cost inverters[J]. IEEE Industry Applications Magazine, 1999, 5(4): 12-18.
  • 2Steimer P K, Steinke J K, Gruning H E. A reliable, interface-friendly medium voltage drive based on the robust IGCT and DTC technologies[C]. Thirty-Fourth lAS Annual Meeting, Phoenix, AZ, USA, 1999, 3: 1505-1512.
  • 3Zuckerberger A, Suter E, Schaub C. Design simulation and realization of high power NPC converters equipped with IGCTs[C]. Proc.of the Thirty-Third IAS Annual Meeting, St. Louis, MO, USA, 1998,2: 865-872.
  • 4Lyons J P, Vlatkovic V, Espelage PM, et al. Innovation IGCT main drives[C].Thirty-Fourth IAS Annual Meeting, Phoenix, AZ, USA, 1999,4: 2655-2661.
  • 5Wang X, Caiafa A, Hudgins J, et al. Temperature effects on IGCT performance[C].38th IAS Annual Meeting, Columbia, SC, USA, 2003,2:1006-1011.
  • 6Winterhalter, Kerkman C, Schlegel R, et al. The effect of circuit parasitic impedance on the performance of IGBTs in voltage source inverters[C]. Proceedings of IEEE APEC, USA, Anaheim, 2001, 2: 995-1001.
  • 7Zare F, Ledwich G F. Reduced layer planar busbar for voltage source inverters[J]. IEEE Transactions on Power Electronics, 2002, 17(4): 508-516.
  • 8Degard B, Ernst R. Applying IGCT's[S]. ABB Application Note 5SYA 2031-01 December, 2002.
  • 9ABB Semiconductors AG. ABB IGCT 5SDF03D4502 data sheet [S]. Switzerland, ABB, 2002.
  • 10ABB Semiconductors AG. ABB IGCT 5SHX08F4502 data sheet[S]. Switzerland, ABB, 2002.

共引文献30

变频器世界
2011年 第1期

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