摘要
采用射频磁控溅射法,在普通玻璃基片上成功制备了SiO2/VOx多层复合薄膜。采用X射线衍射仪(XRD)、傅立叶变换红外光谱仪(FTIR)、紫外可见光分光光度计(UV-Vis)和X射线光电子能谱仪(XPS)研究了薄膜的物相、热致相变特性及V的价态。结果表明,薄膜中VO2晶体具有(110)择优取向生长;SiO2底膜有助于多层复合薄膜中VO2相结晶度的提高,可使V4+摩尔分数由53.9%提高至66.0%;同时,SiO2增透膜的增透效果明显,增透膜沉积时间为60 min时,可使SiO2/VOx/SiO2多层复合薄膜可见光透过率提高至51%;制得的SiO2/VOx/SiO2多层复合薄膜具有较好的热致相变特性。
SiO2/VOx multilayer composite films deposited on the common glass substrates by RF magnetron sputtering method were prepared successfully. The phase structure, thermochromic phase transition character and vanadium valence state were analyzed by XRD, FTIR,UV-Vis and XPS. The results show that the VO2 crystalline contained in prepared films has （110） preferential orientation. The SiO2 base coating is helpful to improve the crystallinity of the VO2 phase and increase the content of V^4＋ from 53.9% to 66.0% （mole fraction）. The visible transmittance of SiO2/VOx/SiO2 multilayer composite film, which is improved by SiO/antireflection coating obviously, can be up to 51% when the deposition time of SiO2 contireflection coating is 60 min. The SiO2/VOx/SiO2 multilayer composite films exhibit good thermochromic phase transition character.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2011年第3期28-31,共4页
Electronic Components And Materials
