一种高速MaskROM的设计研究

Research and Design of a High Speed Mask ROM

文章分析讨论了掩模只读存储器的工作原理和结构,并结合实际工作,详细论述了一个高速的576k位MaskROM的设计与实现。针对字线负载大、速度慢的问题,从选择合适的译码方案和减少字线上RC负载两个方面,提高字线的响应速度,从而使MaskROM的读取时间有较大提高。该款MaskROM采用0.5μm CMOS工艺,电源电压5V,读取时间约为12ns,单位功耗约为1.06 mW/MHz。

This paper analyses the structure and principle of the MaskRom,and then expatiates the design of a 576k bits MaskRom.This design concentrates on the optimization of decoding part by the means of improving the decoding scheme and reducing wordline RC load,which resulting in advantages in timing,area and power.Applying 0.5μm CMOS process,the MaskRom＇s unit dissipation is 1.06 mW/MHz,with 5V supply voltage and about 12ns access time（80MHz speed）.