TF SOI NLIGBT漂移区表面堆积状态小注入间接寿命模型及模拟

Modeling and Simulation for Surface Indirect Lifetime in Drift Region of TF SOI NLIGBT at Light Injection and Accumulative Conditions

为探讨表面复合对TF SOI nLIGBT开关特性的影响,在Si-SiO2界面态连续分布多项式插值近似的平带条件下TF SOI nLIGBT漂移区表面小注入间接复合寿命模型及模拟研究基础上,考虑表面堆积状态下能带向下弯曲对界面态分布的影响而建立了堆积状态下TF SOI nLIGBT漂移区表面小注入间接复合寿命模型,然后采用基于MATLAB平台的循环嵌套矩阵算法进行模拟。

To explore the influences of surface recombination on the turn-off characteristics of TF SOI NLIGBT,surface indirect lifetime in drift region of TF SOI NLIGBT at light injection and accumulative conditions is modeled by considering the impacts from downward curve of energy bands at accumulative surface on the distribution of interface state density,which is based on the modeling and simulation for surface indirect lifetime in drift region of TF SOI NLIGBT at light injection and flat-band conditions with polynomial interpolation approximation of continuous interface state density distribution on the Si-SiO2 interface.Then nested loop matrix arithmetic is utilized to program for the model and simulation results are obtained.