摘要
利用真空蒸发的方法制备ZnTe多晶薄膜,并采用双源法对薄膜进行了稀土元素Dy的掺杂。用XRD、紫外可见分光光度仪对薄膜的性质进行了表征。结果表明,当原子配比Zn∶Te=1∶0.7,热处理温度T=500℃时,可制备较理想的ZnTe多晶薄膜。稀土Dy掺杂并未改变样品的物相结构,但使薄膜光吸收增大而光学带隙减小。
ZnTe thin films was prepared by vacuum evaporation on glass substrate.The thin films were Dy-doped by double-source evaporation.The absorbency characteristic and XRD were studied.The result showed that the ZnTe thin films were the best when Zn∶Te=1∶0.7,annealing temperature T=500℃.The doping of Dy not changes the sample＇ s crystal structure and Dy-doping sample has higher absorbency and narrow optical band gap.
出处
《稀土》
EI
CAS
CSCD
北大核心
2011年第1期50-53,共4页
Chinese Rare Earths
关键词
ZnTe薄膜
光学特性
真空蒸发
稀土掺杂
ZnTe thin film
Optical characteristic
vacuum evaporation
rare-earth doping
