摘要
介绍了非对称型门极换流晶闸管的基本结构和工作原理。在建立3 kV非对称型门极换流晶闸管结构模型的基础上,利用MEDICI软件对GCT正向Ⅰ—Ⅴ特性进行了模拟,在综合考虑通态特性和阻断特性的条件下,得到了3 kV非对称型GCT的p基区结构的最佳设计参数。
The structure and operation principle of asymmetric gate commutated thyristor were described.On the basic of 3 kV asymmetric gate controlled thyristor model,the Ⅰ-Ⅴ characteristic of GCT in forward direction were analyzed by using MEDICI simulator.Considering on-state characteristics and blocking characteristics,the optimal design parameters for p base region of 3 kV asymmetric GCT were obtained.
出处
《仪表技术与传感器》
CSCD
北大核心
2011年第1期86-87,100,共3页
Instrument Technique and Sensor
关键词
门极换流晶闸管
p基区
通态
阻断
gate commutated thyristor
p base region
on-state
blocking
