卤化法制备高纯钛过程中杂质Cr的行为研究

Study on impurity behavior of Cr in the process of high purity titanium preparation by halogen process

对卤化法制备高纯钛过程中杂质Cr的行为进行了热力学分析。实验条件下,在卤化源区(823～1023K),杂质Cr能与卤化剂反应,生成CrI2与CrI3;在沉积区(1373～1473K),CrI2不能分解,CrI3能够分解,杂质Cr主要来自于CrI3的分解携入。

Thermodynamic analysis of impurity of Cr in the process of high purity titanium preparation by halogen process was made.Under the experiment conditions,impurity of Cr can react with halogen agent,to generate CrI 2 and CrI 3 in the halide source area （823 ～ 1023K）.In the deposition area （1373 ～ 1473K）,CrI 3 can decompose,but CrI 2 can not decompose.Impurity of Cr is mainly come from the process of thermal decomposition of CrI3.