化学机械抛光中的颗粒技术

Particle Technology in Chemical Mechanical Planarization

多层金属化是集成芯片以摩尔定律的速度更替的重要工艺手段。在多层金属化中,平坦的晶圆表面对每道工序的成功完成都是非常必要的,而化学机械抛光工艺能在每道工序之前将晶圆表面抛光。化学机械抛光主要是通过使用颗粒研浆去除材料来实现晶圆抛光。除了研浆本身的化学性质外,研浆的效果也受研磨颗粒性质的影响。如果我们能够更好的理解研磨颗粒的特性和颗粒研磨机制,将会有助于提高化学机械抛光效果。本文主要讨论了颗粒形成、研浆稳定性、颗粒润滑以及化学机械抛光中颗粒设计中的最新进展。

In order to keep pace with Moore＇s law,multilevel metallization has become the process of choice.Having a planar wafer surface before every successive step in multilevel metallization is important.The Chemical Mechanical Planarization（CMP） process is used in the semiconductor industry to achieve planar surfaces at every step of the multi-level metallization.In CMP,planarization is achieved primarily due to material removal by the use of abrasive particle slurries.In addition to the slurry chemistry,slurry performance is also dictated by the properties of the abrasive particles.A better understanding of the properties of abrasive particles and particle abrasion mechanisms will lead to better CMP.Some of the challenges in particle modeling,slurry stabilization and particle induced lubrication as well as recent developments in engineered particles for CMP are discussed in this paper.