摘要
首先对光刻过程和RtR(Run-to-Run)控制技术的产生背景进行了介绍,对统计过程控制的不足进行了分析并给出了RtR控制器的一般结构。然后从过程建模和控制算法两个角度对三种主要的光刻过程RtR控制器EWMA,MPC和ANN进行了综述和评价,对这三种控制器在非线性控制、单变量控制、多变量控制的适用性和优化控制效果进行了比较分析。最后指出基于MPC的非线性多变量控制器将成为光刻过程RtR控制器的主要研究方向。
Firstly,the lithography process and background of RtR control technique were introduced.The shortage of statistical process control was analyzed and the general structure of the RtR controller was given.Then,an overview and evaluation about EWMA,MPC and ANN controllers of the lithography process were given in the ways of modeling and control algorithms.Besides,the comparative analysis of the nonlinear control,SISO control,MISO control,MIMO control and optimization control quality of three controllers were presented.Finally,it is proposed that the multivariable nonlinear controllers based on MPC become the future development direction of the lithography process RtR controller.
出处
《半导体技术》
CAS
CSCD
北大核心
2011年第3期199-205,共7页
Semiconductor Technology
基金
国家科技重大专项(2009ZX02001-005)
沈阳市科技计划资助项目(108155202200)
关键词
半导体制造
光刻过程
RtR控制
过程控制
模型预测控制
semiconductor manufacturing
lithography process
RtR control
process control
model predictive control