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Si基3C-SiC反向外延的选择生长和残余应力研究 被引量：1

Study on selective reverse epitaxial growth and its residual stress of 3C-SiC/Si
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摘要 采用一种新的LPCVD方法在Si衬底上通过SiO_2作为掩蔽层,进行3C-SiC的反向外延的选择性生长.TEM,AFM和XRD结果显示3 C-SiC沿(111)面成功实现了较高质量的外延选择生长,其界面清晰,掩蔽良好.生长出的3C-SiC薄膜为织构晶体,单晶性良好.残余应力测试表明3C-SiC薄膜晶格发生压应变,选择性生长区域的残余应力显著降低.据此结果建立了残余应力的形成机制. A new LPCVD method was used to realize selective reverse epitaxial growth of 3C-SiC on Silicon wafer masked by SiO2. The results of TEM, AFM and XRD indicated that well crystallized 3C-SiC （111） films with clear interface and relatively high quality were achieved. The compressive stress was observed in the 3C-SiC films. Compared with 3C-SiC epitaxy on bared Si, the residual stress in the selective epitaxy decreased significantly. Based on the results, the mechanism of the residual stress was formed.
作者 杨翰飞 杨治美 廖熙 龚敏 孙小松
机构地区 四川大学物理科学与技术学院四川省微电子重点实验室 四川大学材料科学与技术学院
出处 《四川大学学报（自然科学版）》 CAS CSCD 北大核心 2011年第1期121-125,共5页 Journal of Sichuan University(Natural Science Edition)
关键词 立方碳化硅 选择生长 掩蔽层 衍射峰位置 残余应力 3C-SiC, selective epitaxial growth, mask layer, XRD peak position, residual stress
分类号 TN304.054 [电子电信—物理电子学]
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参考文献12

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四川大学学报（自然科学版）
2011年 第1期

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